All MOSFET. WMO55N03T1 Datasheet

 

WMO55N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO55N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252

 WMO55N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO55N03T1 Datasheet (PDF)

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 wmo55n03t1.pdf

WMO55N03T1 WMO55N03T1

WMO55N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionWMO55N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 30V, I =55A DS DR

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