WMO55N03T1 Specs and Replacement
Type Designator: WMO55N03T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
WMO55N03T1 substitution
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WMO55N03T1 datasheet
wmo55n03t1.pdf
WMO55N03T1 30V N-Channel Enhancement Mode Power MOSFET D Description WMO55N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 30V, I =55A DS D R ... See More ⇒
Detailed specifications: WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , IRF640 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 , WML6N80D1 .
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