All MOSFET. WMO55N03T1 Datasheet

 

WMO55N03T1 Datasheet and Replacement


   Type Designator: WMO55N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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WMO55N03T1 Datasheet (PDF)

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WMO55N03T1

WMO55N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionWMO55N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 30V, I =55A DS DR

Datasheet: WMO30P03TS , WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , IRFP460 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 , WML6N80D1 .

History: PHP6ND50E

Keywords - WMO55N03T1 MOSFET datasheet

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