All MOSFET. WMO5N50D1B Datasheet

 

WMO5N50D1B Datasheet and Replacement


   Type Designator: WMO5N50D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252
 

 WMO5N50D1B substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMO5N50D1B Datasheet (PDF)

 ..1. Size:1212K  way-on
 wmo5n50d1b.pdf pdf_icon

WMO5N50D1B

WMO5N50D1B 500V 5A 1.35 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density D G and high efficiency. And it is very robust S and RoHS compliant. Features Typ.R =1.35@V =10V DS(on) GS 100% avalan

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1700

Keywords - WMO5N50D1B MOSFET datasheet

 WMO5N50D1B cross reference
 WMO5N50D1B equivalent finder
 WMO5N50D1B lookup
 WMO5N50D1B substitution
 WMO5N50D1B replacement

 

 
Back to Top

 


 
.