All MOSFET. WMO5N50D1B Datasheet

 

WMO5N50D1B Datasheet and Replacement


   Type Designator: WMO5N50D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252
 

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WMO5N50D1B Datasheet (PDF)

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WMO5N50D1B

WMO5N50D1B 500V 5A 1.35 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density D G and high efficiency. And it is very robust S and RoHS compliant. Features Typ.R =1.35@V =10V DS(on) GS 100% avalan

Datasheet: WMO30P10TS , WMO35N06T1 , WMO35P04T1 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , WMO55N03T1 , IRF1404 , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , WMO6N80D1 , WML6N80D1 , WMO75N04T1 .

History: TWE3139K | BSS83

Keywords - WMO5N50D1B MOSFET datasheet

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