All MOSFET. WMO5N50D1B Datasheet

 

WMO5N50D1B MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO5N50D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252

 WMO5N50D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO5N50D1B Datasheet (PDF)

 ..1. Size:1212K  way-on
 wmo5n50d1b.pdf

WMO5N50D1B WMO5N50D1B

WMO5N50D1B 500V 5A 1.35 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density D G and high efficiency. And it is very robust S and RoHS compliant. Features Typ.R =1.35@V =10V DS(on) GS 100% avalan

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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