WMO690N15HG2 Datasheet and Replacement
Type Designator: WMO690N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 45.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO252
WMO690N15HG2 substitution
WMO690N15HG2 Datasheet (PDF)
wmo690n15hg2.pdf

WMO690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =2
Datasheet: WMO50P03T1 , WMO50P04T1 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , IRFB4227 , WMO6N80D1 , WML6N80D1 , WMO75N04T1 , WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 .
History: SED14N65G | TMAN11N90Z
Keywords - WMO690N15HG2 MOSFET datasheet
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History: SED14N65G | TMAN11N90Z



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