WMO690N15HG2 Specs and Replacement
Type Designator: WMO690N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 45.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO252
WMO690N15HG2 substitution
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WMO690N15HG2 datasheet
wmo690n15hg2.pdf
WMO690N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMO690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the D on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. G TO-252 Features V = 150V, I =2... See More ⇒
Detailed specifications: WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS, AO3400, WMO6N80D1, WML6N80D1, WMO75N04T1, WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1
Keywords - WMO690N15HG2 MOSFET specs
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