All MOSFET. WMO690N15HG2 Datasheet

 

WMO690N15HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO690N15HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 45.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO252

 WMO690N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO690N15HG2 Datasheet (PDF)

 ..1. Size:978K  way-on
 wmo690n15hg2.pdf

WMO690N15HG2 WMO690N15HG2

WMO690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the Don-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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