WMO6N80D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO6N80D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 27.6 nS
Cossⓘ - Output Capacitance: 118 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO252
WMO6N80D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO6N80D1 Datasheet (PDF)
..1. Size:1168K way-on
wmo6n80d1 wml6n80d1.pdf
wmo6n80d1 wml6n80d1.pdf
WMO6N80D1 WML6N80D1800V 6A 2.5 N-ch Power MOSFETDescriptionTO-220FTO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGGrobust and RoHS compliant.DSSFeatures Typ.R =2.5@V =10VDS(on) GS 100%
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
