WMO6N80D1 PDF and Equivalents Search

 

WMO6N80D1 Specs and Replacement

Type Designator: WMO6N80D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.6 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO252

WMO6N80D1 substitution

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WMO6N80D1 datasheet

 ..1. Size:1168K  way-on
 wmo6n80d1 wml6n80d1.pdf pdf_icon

WMO6N80D1

WMO6N80D1 WML6N80D1 800V 6A 2.5 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G G robust and RoHS compliant. D S S Features Typ.R =2.5 @V =10V DS(on) GS 100%... See More ⇒

Detailed specifications: WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS, WMO690N15HG2, IRFB4227, WML6N80D1, WMO75N04T1, WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1, WMO90P03TS

Keywords - WMO6N80D1 MOSFET specs

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