All MOSFET. WMO6N80D1 Datasheet

 

WMO6N80D1 Datasheet and Replacement


   Type Designator: WMO6N80D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.6 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO252
 

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WMO6N80D1 Datasheet (PDF)

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WMO6N80D1

WMO6N80D1 WML6N80D1800V 6A 2.5 N-ch Power MOSFETDescriptionTO-220FTO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGGrobust and RoHS compliant.DSSFeatures Typ.R =2.5@V =10VDS(on) GS 100%

Datasheet: WMO50P04T1 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 , WMO60P02TS , WMO60P03TS , WMO690N15HG2 , AON6414A , WML6N80D1 , WMO75N04T1 , WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS .

History: IPN80R900P7

Keywords - WMO6N80D1 MOSFET datasheet

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