All MOSFET. WMO75N04T1 Datasheet

 

WMO75N04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO75N04T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252

 WMO75N04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO75N04T1 Datasheet (PDF)

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 wmo75n04t1.pdf

WMO75N04T1 WMO75N04T1

WMO75N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMO75N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 40V, I = 75A DS DTO-252R

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