All MOSFET. WMO95P06TS Datasheet

 

WMO95P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO95P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 156.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 93 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58.4 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252

 WMO95P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO95P06TS Datasheet (PDF)

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 wmo95p06ts.pdf

WMO95P06TS WMO95P06TS

WMO95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -93A DS DTO-252R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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