WMO95P06TS PDF and Equivalents Search

 

WMO95P06TS Specs and Replacement

Type Designator: WMO95P06TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 93 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO252

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WMO95P06TS datasheet

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WMO95P06TS

WMO95P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = -60V, I = -93A DS D TO-252 R ... See More ⇒

Detailed specifications: WMO75N04T1, WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1, WMO90P03TS, WMO90P04TS, IRF630, WMO96N03T1, WMO9N65D1, WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4

Keywords - WMO95P06TS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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