All MOSFET. WMO95P06TS Datasheet

 

WMO95P06TS Datasheet and Replacement


   Type Designator: WMO95P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 156.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252
 

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WMO95P06TS Datasheet (PDF)

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WMO95P06TS

WMO95P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO95P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = -60V, I = -93A DS DTO-252R

Datasheet: WMO75N04T1 , WMO80N03T1 , WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , IRF630 , WMO96N03T1 , WMO9N65D1 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 .

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