All MOSFET. WMO9N65D1 Datasheet

 

WMO9N65D1 Datasheet and Replacement


   Type Designator: WMO9N65D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252
 

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WMO9N65D1 Datasheet (PDF)

 ..1. Size:1203K  way-on
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WMO9N65D1

WMO9N65D1650V 9A 0.85 N-ch Power MOSFETDescriptionTO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerDGdensity and high efficiency. And it is verySrobust and RoHS compliant.Features Typ.R =0.85@V =10VDS(on) GS 100% avalanche tested Pb-

 9.1. Size:1621K  way-on
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WMO9N65D1

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S

Datasheet: WMO80N06TS , WMO80N08TS , WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 , 2N7000 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 .

History: SJMN600R70MD | IRL3303PBF | IRFR4105ZTR | WPM1483 | IRFR3709ZCT | RU30J30M3 | R6576KNZ1

Keywords - WMO9N65D1 MOSFET datasheet

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