WMO9N65D1 MOSFET Datasheet: N-Ch, 650V, 9A. Full specification with pinout and replacement list

WMO9N65D1 Specs and Replacement

Type Designator: WMO9N65D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO252

WMO9N65D1 substitution

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WMO9N65D1 datasheet

..1. Size:1203K way-on
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WMO9N65D1 650V 9A 0.85 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power D G density and high efficiency. And it is very S robust and RoHS compliant. Features Typ.R =0.85 @V =10V DS(on) GS 100% avalanche tested Pb-... See More ⇒

9.1. Size:1621K way-on
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WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S ... See More ⇒

Detailed specifications: WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1, WMO90P03TS, WMO90P04TS, WMO95P06TS, WMO96N03T1, AON7408, WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4