WMQ020N03LG4 Specs and Replacement
Type Designator: WMQ020N03LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 118 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 1090 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: PDFN3030-8L
WMQ020N03LG4 substitution
- MOSFET ⓘ Cross-Reference Search
WMQ020N03LG4 datasheet
wmq020n03lg4.pdf
WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ020N03LG4 uses Wayon's 4th generation power trench S G MOSFET technology that has been especially tailored to minimize S S S S G S the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8L switching a... See More ⇒
wmq023n03lg2.pdf
WMQ023N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ023N03LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD... See More ⇒
Detailed specifications: WMO80P04TS, WMO90N02T1, WMO90P03TS, WMO90P04TS, WMO95P06TS, WMO96N03T1, WMO9N65D1, WMP119N10LG2, STP75NF75, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2
Keywords - WMQ020N03LG4 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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