All MOSFET. WMQ020N03LG4 Datasheet

 

WMQ020N03LG4 Datasheet and Replacement


   Type Designator: WMQ020N03LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 118 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 1090 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: PDFN3030-8L
 

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WMQ020N03LG4 Datasheet (PDF)

 ..1. Size:620K  way-on
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WMQ020N03LG4

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ020N03LG4 uses Wayon's 4th generation power trench SGMOSFET technology that has been especially tailored to minimize SSSSGSthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a

 9.1. Size:656K  way-on
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WMQ020N03LG4

WMQ023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ023N03LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

Datasheet: WMO80P04TS , WMO90N02T1 , WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 , WMO9N65D1 , WMP119N10LG2 , 12N60 , WMQ023N03LG2 , WMQ032N04LG2 , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 .

History: NTMD4840N | FQD4P40TF | F6N90 | SSF11NS65UF | S85N16S | CEP05N8 | CS04CN10

Keywords - WMQ020N03LG4 MOSFET datasheet

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