All MOSFET. WMQ023N03LG2 Datasheet

 

WMQ023N03LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ023N03LG2
   Marking Code: 023N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN3030-8L

 WMQ023N03LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ023N03LG2 Datasheet (PDF)

 ..1. Size:656K  way-on
 wmq023n03lg2.pdf

WMQ023N03LG2 WMQ023N03LG2

WMQ023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ023N03LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

 9.1. Size:620K  way-on
 wmq020n03lg4.pdf

WMQ023N03LG2 WMQ023N03LG2

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ020N03LG4 uses Wayon's 4th generation power trench SGMOSFET technology that has been especially tailored to minimize SSSSGSthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCPF150N65F | FDA28N50F

 

 
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