WMQ023N03LG2 PDF and Equivalents Search

 

WMQ023N03LG2 Specs and Replacement

Type Designator: WMQ023N03LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PDFN3030-8L

WMQ023N03LG2 substitution

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WMQ023N03LG2 datasheet

 ..1. Size:656K  way-on
 wmq023n03lg2.pdf pdf_icon

WMQ023N03LG2

WMQ023N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ023N03LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD... See More ⇒

 9.1. Size:620K  way-on
 wmq020n03lg4.pdf pdf_icon

WMQ023N03LG2

WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ020N03LG4 uses Wayon's 4th generation power trench S G MOSFET technology that has been especially tailored to minimize S S S S G S the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8L switching a... See More ⇒

Detailed specifications: WMO90N02T1, WMO90P03TS, WMO90P04TS, WMO95P06TS, WMO96N03T1, WMO9N65D1, WMP119N10LG2, WMQ020N03LG4, 2N7002, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2, WMQ080N03LG2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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