WMQ023N03LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ023N03LG2
Marking Code: 023N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 46.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PDFN3030-8L
WMQ023N03LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ023N03LG2 Datasheet (PDF)
wmq023n03lg2.pdf
WMQ023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ023N03LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD
wmq020n03lg4.pdf
WMQ020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ020N03LG4 uses Wayon's 4th generation power trench SGMOSFET technology that has been especially tailored to minimize SSSSGSthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN3030-8Lswitching a
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