All MOSFET. WMQ032N04LG2 Datasheet

 

WMQ032N04LG2 Datasheet and Replacement


   Type Designator: WMQ032N04LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: PDFN3030-8L
 

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WMQ032N04LG2 Datasheet (PDF)

 ..1. Size:990K  way-on
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WMQ032N04LG2

WMQ032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDDDWMQ032N04LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

Datasheet: WMO90P03TS , WMO90P04TS , WMO95P06TS , WMO96N03T1 , WMO9N65D1 , WMP119N10LG2 , WMQ020N03LG4 , WMQ023N03LG2 , IRF1010E , WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , WMQ080N03LG2 , WMQ090N04LG2 .

History: IRC640PBF | IRLR7821C | APM1106K | TK6Q65W

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