All MOSFET. WMQ032N04LG2 Datasheet

 

WMQ032N04LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ032N04LG2
   Marking Code: 032N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: PDFN3030-8L

 WMQ032N04LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ032N04LG2 Datasheet (PDF)

 ..1. Size:990K  way-on
 wmq032n04lg2.pdf

WMQ032N04LG2 WMQ032N04LG2

WMQ032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDDDWMQ032N04LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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