All MOSFET. WMQ050N03LG4 Datasheet

 

WMQ050N03LG4 Datasheet and Replacement


   Type Designator: WMQ050N03LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 513 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN3030-8L
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WMQ050N03LG4 Datasheet (PDF)

 ..1. Size:981K  way-on
 wmq050n03lg4.pdf pdf_icon

WMQ050N03LG4

WMQ050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDD DWMQ050N03LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching app

 6.1. Size:668K  way-on
 wmq050n04lg2.pdf pdf_icon

WMQ050N03LG4

WMQ050N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ050N04LG2 uses Wayon's 2nd generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state GSSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVSP11N60FD2 | SIR836DP | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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