WMQ050N04LG2 MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

WMQ050N04LG2 Specs and Replacement

Type Designator: WMQ050N04LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

Cossⓘ - Output Capacitance: 708 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN3030-8L

WMQ050N04LG2 substitution

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WMQ050N04LG2 datasheet

..1. Size:668K way-on
wmq050n04lg2.pdf pdf_icon

WMQ050N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ050N04LG2 uses Wayon's 2nd generation power trench MOSFET S technology that has been especially tailored to minimize the on-state G S S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. ... See More ⇒

6.1. Size:981K way-on
wmq050n03lg4.pdf pdf_icon

WMQ050N03LG4 30V N-Channel Enhancement Mode Power MOSFET D Description D D D D D D D WMQ050N03LG4 uses Wayon's 4th generation power trench S G S MOSFET technology that has been especially tailored to minimize S S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching app... See More ⇒

Detailed specifications: WMP119N10LG2, WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, IRFP260, WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2