All MOSFET. WMQ050N04LG2 Datasheet

 

WMQ050N04LG2 Datasheet and Replacement


   Type Designator: WMQ050N04LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 708 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN3030-8L
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WMQ050N04LG2 Datasheet (PDF)

 ..1. Size:668K  way-on
 wmq050n04lg2.pdf pdf_icon

WMQ050N04LG2

WMQ050N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ050N04LG2 uses Wayon's 2nd generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state GSSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

 6.1. Size:981K  way-on
 wmq050n03lg4.pdf pdf_icon

WMQ050N04LG2

WMQ050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDD DWMQ050N03LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching app

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: KMB6D0DN30QB | MC08N005C | IRLR024 | CED05N8 | FCH170N60 | AON6794 | BL10N70-A

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