WMQ050N04LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ050N04LG2
Marking Code: 050N04L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.1 nC
trⓘ - Rise Time: 8.9 nS
Cossⓘ - Output Capacitance: 708 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN3030-8L
WMQ050N04LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ050N04LG2 Datasheet (PDF)
wmq050n04lg2.pdf
WMQ050N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ050N04LG2 uses Wayon's 2nd generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state GSSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
wmq050n03lg4.pdf
WMQ050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDD DWMQ050N03LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching app
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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