All MOSFET. WMQ050N04LG2 Datasheet

 

WMQ050N04LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ050N04LG2
   Marking Code: 050N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.1 nC
   trⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 708 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN3030-8L

 WMQ050N04LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ050N04LG2 Datasheet (PDF)

 ..1. Size:668K  way-on
 wmq050n04lg2.pdf

WMQ050N04LG2 WMQ050N04LG2

WMQ050N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ050N04LG2 uses Wayon's 2nd generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state GSSSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.

 6.1. Size:981K  way-on
 wmq050n03lg4.pdf

WMQ050N04LG2 WMQ050N04LG2

WMQ050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDDDD DWMQ050N03LG4 uses Wayon's 4th generation power trench SGSMOSFET technology that has been especially tailored to minimize SSSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching app

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AM50P06-15D | 12N65 | ELM34600AA | IRFI4019HG-117P

 

 
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