WMQ060N08LG2 PDF and Equivalents Search

 

WMQ060N08LG2 Specs and Replacement

Type Designator: WMQ060N08LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 437 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: PDFN3030-8L

WMQ060N08LG2 substitution

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WMQ060N08LG2 datasheet

 ..1. Size:608K  way-on
 wmq060n08lg2.pdf pdf_icon

WMQ060N08LG2

WMQ060N08LG2 80V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ060N08LG2 uses Wayon's 2nd generation power trench S G S S MOSFET technology that has been especially tailored to minimize the S S G S on-state resistance and yet maintain superior switching performance. PDFN3030-8L This device is well suited for high efficiency fast switching app... See More ⇒

Detailed specifications: WMQ020N03LG4, WMQ023N03LG2, WMQ032N04LG2, WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, 4435, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS

Keywords - WMQ060N08LG2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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