All MOSFET. WMQ060N08LG2 Datasheet

 

WMQ060N08LG2 Datasheet and Replacement


   Type Designator: WMQ060N08LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: PDFN3030-8L
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WMQ060N08LG2 Datasheet (PDF)

 ..1. Size:608K  way-on
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WMQ060N08LG2

WMQ060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ060N08LG2 uses Wayon's 2nd generation power trench SGSSMOSFET technology that has been especially tailored to minimize the SSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching app

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