All MOSFET. WMQ060N08LG2 Datasheet

 

WMQ060N08LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ060N08LG2
   Marking Code: 060N08L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: PDFN3030-8L

 WMQ060N08LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ060N08LG2 Datasheet (PDF)

 ..1. Size:608K  way-on
 wmq060n08lg2.pdf

WMQ060N08LG2 WMQ060N08LG2

WMQ060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ060N08LG2 uses Wayon's 2nd generation power trench SGSSMOSFET technology that has been especially tailored to minimize the SSGSon-state resistance and yet maintain superior switching performance. PDFN3030-8LThis device is well suited for high efficiency fast switching app

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top