WMQ10N10TS PDF and Equivalents Search

 

WMQ10N10TS Specs and Replacement

Type Designator: WMQ10N10TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: PDFN3030-8L

WMQ10N10TS substitution

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WMQ10N10TS datasheet

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 wmq10n10ts.pdf pdf_icon

WMQ10N10TS

WMQ10N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMQ10N10TS uses advanced power trench technology that has D D D D D D been especially tailored to minimize the on-state resistance and D D yet maintain superior switching performance. S G S S S Features S G S V = 100V, I = 10A DS D PDFN3030-8L R ... See More ⇒

Detailed specifications: WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, 12N60, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4, WMQ140NV6LG4, WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS

Keywords - WMQ10N10TS MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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