All MOSFET. WMQ10N10TS Datasheet

 

WMQ10N10TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ10N10TS
   Marking Code: Q10N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: PDFN3030-8L

 WMQ10N10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ10N10TS Datasheet (PDF)

 ..1. Size:630K  way-on
 wmq10n10ts.pdf

WMQ10N10TS WMQ10N10TS

WMQ10N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMQ10N10TS uses advanced power trench technology that has DDDDDDbeen especially tailored to minimize the on-state resistance and D Dyet maintain superior switching performance. SGSSSFeatures SGS V = 100V, I = 10A DS DPDFN3030-8LR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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