All MOSFET. WMQ119N10LG2 Datasheet

 

WMQ119N10LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ119N10LG2
   Marking Code: 119N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3030-8L

 WMQ119N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ119N10LG2 Datasheet (PDF)

 ..1. Size:501K  way-on
 wmq119n10lg2.pdf

WMQ119N10LG2 WMQ119N10LG2

WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching ap

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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