WMQ119N10LG2 MOSFET Datasheet: N-Ch, 100V, 42A. Full specification with pinout and replacement list

WMQ119N10LG2 Specs and Replacement

Type Designator: WMQ119N10LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PDFN3030-8L

WMQ119N10LG2 substitution

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WMQ119N10LG2 datasheet

..1. Size:501K way-on
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WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET S G technology that has been especially tailored to minimize the on-state S S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching ap... See More ⇒

Detailed specifications: WMQ050N04LG2, WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, 5N65, WMQ12P10TS, WMQ140DNV6LG4, WMQ140NV6LG4, WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS