WMQ12P10TS PDF and Equivalents Search

 

WMQ12P10TS Specs and Replacement

Type Designator: WMQ12P10TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: PDFN3030-8L

WMQ12P10TS substitution

- MOSFET ⓘ Cross-Reference Search

 

WMQ12P10TS datasheet

 ..1. Size:607K  way-on
 wmq12p10ts.pdf pdf_icon

WMQ12P10TS

WMQ12P10TS 100V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ12P10TS uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -100V, I = -12A DS D R ... See More ⇒

Detailed specifications: WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, IRF1010E, WMQ140DNV6LG4, WMQ140NV6LG4, WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS

Keywords - WMQ12P10TS MOSFET specs

 WMQ12P10TS cross reference

 WMQ12P10TS equivalent finder

 WMQ12P10TS pdf lookup

 WMQ12P10TS substitution

 WMQ12P10TS replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.