All MOSFET. WMQ140DNV6LG4 Datasheet

 

WMQ140DNV6LG4 Datasheet and Replacement


   Type Designator: WMQ140DNV6LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN3030-8L
 

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WMQ140DNV6LG4 Datasheet (PDF)

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WMQ140DNV6LG4

WMQ140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2D1D2WMQ140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2G1 S2G2S1This device is well suited for high efficiency fast swi

 8.1. Size:982K  way-on
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WMQ140DNV6LG4

WMQ140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMQ140NV6LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN3

Datasheet: WMQ080N03LG2 , WMQ090N04LG2 , WMQ090NV6LG4 , WMQ098N03LG2 , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , AON7506 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 .

History: IPA50R950CE | IPA60R230P6 | IPA60R190P6 | HAT1065R | AOW11S65 | HAT2119H | FDS8840NZ

Keywords - WMQ140DNV6LG4 MOSFET datasheet

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