WMQ140DNV6LG4 Specs and Replacement
Type Designator: WMQ140DNV6LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PDFN3030-8L
WMQ140DNV6LG4 substitution
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WMQ140DNV6LG4 datasheet
wmq140dnv6lg4.pdf
WMQ140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMQ140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 G1 S2 G2 S1 This device is well suited for high efficiency fast swi... See More ⇒
wmq140nv6lg4.pdf
WMQ140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ140NV6LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN3... See More ⇒
Detailed specifications: WMQ080N03LG2, WMQ090N04LG2, WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, IRFB3607, WMQ140NV6LG4, WMQ15DN04TS, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1
Keywords - WMQ140DNV6LG4 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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