WMQ140DNV6LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ140DNV6LG4
Marking Code: 140DNV6L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 23.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PDFN3030-8L
WMQ140DNV6LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ140DNV6LG4 Datasheet (PDF)
wmq140dnv6lg4.pdf
WMQ140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2D1D2WMQ140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2G1 S2G2S1This device is well suited for high efficiency fast swi
wmq140nv6lg4.pdf
WMQ140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMQ140NV6LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN3
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