WMQ15DN04TS Specs and Replacement
Type Designator: WMQ15DN04TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 11.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: PDFN3030-8L
WMQ15DN04TS substitution
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WMQ15DN04TS datasheet
wmq15dn04ts.pdf
WMQ15DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 WMQ15DN04TS uses advanced power trench technology that D1 D2 has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 G2 G1 S2 S2 G1 Features G2 S1 V = 40V, I = 15A DS D PDFN3030-8L R ... See More ⇒
Detailed specifications: WMQ090NV6LG4, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4, WMQ140NV6LG4, IRF530, WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1, WMQ25P04T1, WMQ25P06TS
Keywords - WMQ15DN04TS MOSFET specs
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History: FDN335N-NL
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