WMQ175N10HG4 MOSFET Datasheet: N-Ch, 100V, 42A. Full specification with pinout and replacement list

WMQ175N10HG4 Specs and Replacement

Type Designator: WMQ175N10HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PDFN3030-8L

WMQ175N10HG4 substitution

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WMQ175N10HG4 datasheet

..1. Size:622K way-on
wmq175n10hg4.pdf pdf_icon

WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ175N10HG4 uses Wayon's 4th generation power trench S G S S MOSFET technology that has been especially tailored to minimize S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching ... See More ⇒

5.1. Size:600K way-on
wmq175n10lg4.pdf pdf_icon

WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ175N10LG4 uses Wayon's 4th generation power trench S G S S MOSFET technology that has been especially tailored to minimize S S G S the on-state resistance and yet maintain superior switching PDFN3030-8L performance. This device is well suited for high efficiency fast switching ... See More ⇒

Detailed specifications: WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4, WMQ140NV6LG4, WMQ15DN04TS, CS150N03A8, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1, WMQ25P04T1, WMQ25P06TS, WMQ26P02TS