All MOSFET. WMQ175N10HG4 Datasheet

 

WMQ175N10HG4 Datasheet and Replacement


   Type Designator: WMQ175N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN3030-8L
 

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WMQ175N10HG4 Datasheet (PDF)

 ..1. Size:622K  way-on
 wmq175n10hg4.pdf pdf_icon

WMQ175N10HG4

WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10HG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

 5.1. Size:600K  way-on
 wmq175n10lg4.pdf pdf_icon

WMQ175N10HG4

WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10LG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - WMQ175N10HG4 MOSFET datasheet

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