WMQ175N10HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ175N10HG4
Marking Code: 175N10H4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: PDFN3030-8L
WMQ175N10HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ175N10HG4 Datasheet (PDF)
wmq175n10hg4.pdf
WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10HG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching
wmq175n10lg4.pdf
WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10LG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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