All MOSFET. WMQ175N10LG4 Datasheet

 

WMQ175N10LG4 Datasheet and Replacement


   Type Designator: WMQ175N10LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: PDFN3030-8L
 

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WMQ175N10LG4 Datasheet (PDF)

 ..1. Size:600K  way-on
 wmq175n10lg4.pdf pdf_icon

WMQ175N10LG4

WMQ175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10LG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

 5.1. Size:622K  way-on
 wmq175n10hg4.pdf pdf_icon

WMQ175N10LG4

WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ175N10HG4 uses Wayon's 4th generation power trench SGSSMOSFET technology that has been especially tailored to minimize SSGSthe on-state resistance and yet maintain superior switching PDFN3030-8Lperformance. This device is well suited for high efficiency fast switching

Datasheet: WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , IRFP450 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 .

History: STT3599C | SML9030-220M | SL8N100K | JMSL0302AG | FDBL86062-F085 | IRFHM792PBF | CS5N60A4H

Keywords - WMQ175N10LG4 MOSFET datasheet

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