WMQ18P04TS Specs and Replacement
Type Designator: WMQ18P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: PDFN3030-8L
WMQ18P04TS substitution
WMQ18P04TS datasheet
wmq18p04ts.pdf
WMQ18P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ18P04TS uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet S G maintain superior switching performance. S S S S G S Features PDFN3030-8L V = -40V, I = -18A DS D R ... See More ⇒
Detailed specifications: WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , AON7506 , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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