WMQ18P04TS Datasheet and Replacement
Type Designator: WMQ18P04TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: PDFN3030-8L
WMQ18P04TS substitution
WMQ18P04TS Datasheet (PDF)
wmq18p04ts.pdf
WMQ18P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ18P04TS uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet SGmaintain superior switching performance. SSSSGSFeatures PDFN3030-8L V = -40V, I = -18A DS DR
Datasheet: WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , 2N7002 , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS .
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