All MOSFET. WMQ20DN06TS Datasheet

 

WMQ20DN06TS Datasheet and Replacement


   Type Designator: WMQ20DN06TS
   Marking Code: Q20DN06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PDFN3030-8L
 

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WMQ20DN06TS Datasheet (PDF)

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WMQ20DN06TS

WMQ20DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ20DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance S1G2G1S2S2G1and yet maintain superior switching performance. G2S1Features PDFN3030-8L V = 60V, I = 20A DS DR

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WMQ20DN06TS

WMQ20N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMQ20N06TS uses advanced power trench technology that DDDDDDhas been especially tailored to minimize the on-state resistance D Dand yet maintain superior switching performance. SGSSSFeatures SGS V = 60V, I = 20A DS DPDFN3030-8LR

Datasheet: WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , 20N50 , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS .

History: RU6080L

Keywords - WMQ20DN06TS MOSFET datasheet

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