All MOSFET. WMQ20DN06TS Datasheet

 

WMQ20DN06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ20DN06TS
   Marking Code: Q20DN06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PDFN3030-8L

 WMQ20DN06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ20DN06TS Datasheet (PDF)

 ..1. Size:610K  way-on
 wmq20dn06ts.pdf

WMQ20DN06TS WMQ20DN06TS

WMQ20DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ20DN06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance S1G2G1S2S2G1and yet maintain superior switching performance. G2S1Features PDFN3030-8L V = 60V, I = 20A DS DR

 9.1. Size:1003K  way-on
 wmq20n06ts.pdf

WMQ20DN06TS WMQ20DN06TS

WMQ20N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMQ20N06TS uses advanced power trench technology that DDDDDDhas been especially tailored to minimize the on-state resistance D Dand yet maintain superior switching performance. SGSSSFeatures SGS V = 60V, I = 20A DS DPDFN3030-8LR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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