All MOSFET. WMQ26P02TS Datasheet

 

WMQ26P02TS Datasheet and Replacement


   Type Designator: WMQ26P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: PDFN3030-8L
 

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WMQ26P02TS Datasheet (PDF)

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WMQ26P02TS

WMQ26P02TS 20V P-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ26P02TS uses advanced power trench technology that has SGSSbeen especially tailored to minimize the on-state resistance and yet SSGSmaintain superior switching performance.PDFN3030-8LFeatures V = -20V, I = -26A DS DR

Datasheet: WMQ175N10HG4 , WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , 10N65 , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 .

History: IAUS180N04S4N015 | SI4436DY | IRFF034 | AP2614GY-HF | STW10NA50 | SSH8N80 | FC694309

Keywords - WMQ26P02TS MOSFET datasheet

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