All MOSFET. WMQ26P02TS Datasheet

 

WMQ26P02TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ26P02TS
   Marking Code: Q26P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: PDFN3030-8L

 WMQ26P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ26P02TS Datasheet (PDF)

 ..1. Size:623K  way-on
 wmq26p02ts.pdf

WMQ26P02TS WMQ26P02TS

WMQ26P02TS 20V P-Channel Enhancement Mode Power MOSFET DDDescriptionDDDDD DWMQ26P02TS uses advanced power trench technology that has SGSSbeen especially tailored to minimize the on-state resistance and yet SSGSmaintain superior switching performance.PDFN3030-8LFeatures V = -20V, I = -26A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top