WMQ26P02TS PDF and Equivalents Search

 

WMQ26P02TS Specs and Replacement

Type Designator: WMQ26P02TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.5 nS

Cossⓘ - Output Capacitance: 218 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: PDFN3030-8L

WMQ26P02TS substitution

- MOSFET ⓘ Cross-Reference Search

 

WMQ26P02TS datasheet

 ..1. Size:623K  way-on
 wmq26p02ts.pdf pdf_icon

WMQ26P02TS

WMQ26P02TS 20V P-Channel Enhancement Mode Power MOSFET D D Description D D D D D D WMQ26P02TS uses advanced power trench technology that has S G S S been especially tailored to minimize the on-state resistance and yet S S G S maintain superior switching performance. PDFN3030-8L Features V = -20V, I = -26A DS D R ... See More ⇒

Detailed specifications: WMQ175N10HG4, WMQ175N10LG4, WMQ18P04TS, WMQ20DN06TS, WMQ20N06TS, WMQ25P03T1, WMQ25P04T1, WMQ25P06TS, 4N60, WMQ28N03T1, WMQ30DN04TS, WMQ30DP03TS, WMQ30N02T1, WMQ30N03T2, WMQ30N04TS, WMQ30N06TS, WMQ30P03T1

Keywords - WMQ26P02TS MOSFET specs

 WMQ26P02TS cross reference

 WMQ26P02TS equivalent finder

 WMQ26P02TS pdf lookup

 WMQ26P02TS substitution

 WMQ26P02TS replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.