WMQ26P02TS Datasheet and Replacement

   Type Designator: WMQ26P02TS
   Marking Code: Q26P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: PDFN3030-8L
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