All MOSFET. WMQ28N03T1 Datasheet

 

WMQ28N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ28N03T1
   Marking Code: Q28N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.3 nC
   trⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN3030-8L

 WMQ28N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ28N03T1 Datasheet (PDF)

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 wmq28n03t1.pdf

WMQ28N03T1 WMQ28N03T1

WMQ28N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ28N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 28A DS DR

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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