WMQ28N03T1 Specs and Replacement
Type Designator: WMQ28N03T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.9 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: PDFN3030-8L
WMQ28N03T1 substitution
WMQ28N03T1 datasheet
wmq28n03t1.pdf
WMQ28N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMQ28N03T1 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 28A DS D R ... See More ⇒
Detailed specifications: WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , IRFP250 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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