All MOSFET. WMQ28N03T1 Datasheet

 

WMQ28N03T1 Datasheet and Replacement


   Type Designator: WMQ28N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: PDFN3030-8L
 

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WMQ28N03T1 Datasheet (PDF)

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WMQ28N03T1

WMQ28N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ28N03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 28A DS DR

Datasheet: WMQ175N10LG4 , WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , IRFP250 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 .

History: AP65SL380AI | L2N7002M3T5G | TA17632 | 2SJ465 | PJA45N02 | FTK4503 | ZVP0545GTA

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