WMQ35P02TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ35P02TS
Marking Code: Q35P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN3030-8L
WMQ35P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ35P02TS Datasheet (PDF)
wmq35p02ts.pdf
WMQ35P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMQ35P02TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGFeatures S V = -20V, I = -35A DS DPDFN3030-8LR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100