All MOSFET. WMQ35P02TS Datasheet

 

WMQ35P02TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ35P02TS
   Marking Code: Q35P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3030-8L

 WMQ35P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ35P02TS Datasheet (PDF)

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 wmq35p02ts.pdf

WMQ35P02TS WMQ35P02TS

WMQ35P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMQ35P02TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGFeatures S V = -20V, I = -35A DS DPDFN3030-8LR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STV55N05L

 

 
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