All MOSFET. WMQ35P02TS Datasheet

 

WMQ35P02TS Datasheet and Replacement


   Type Designator: WMQ35P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3030-8L
 

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WMQ35P02TS Datasheet (PDF)

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WMQ35P02TS

WMQ35P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMQ35P02TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGFeatures S V = -20V, I = -35A DS DPDFN3030-8LR

Datasheet: WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , 2N60 , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 .

History: IXFK170N20P | IPD034N06N3

Keywords - WMQ35P02TS MOSFET datasheet

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