WMQ35P02TS PDF and Equivalents Search

 

WMQ35P02TS Specs and Replacement

Type Designator: WMQ35P02TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PDFN3030-8L

WMQ35P02TS substitution

- MOSFET ⓘ Cross-Reference Search

 

WMQ35P02TS datasheet

 ..1. Size:616K  way-on
 wmq35p02ts.pdf pdf_icon

WMQ35P02TS

WMQ35P02TS 20V P-Channel Enhancement Mode Power MOSFET Description D D WMQ35P02TS uses advanced power trench technology that has D D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G Features S V = -20V, I = -35A DS D PDFN3030-8L R ... See More ⇒

Detailed specifications: WMQ30DN04TS, WMQ30DP03TS, WMQ30N02T1, WMQ30N03T2, WMQ30N04TS, WMQ30N06TS, WMQ30P03T1, WMQ30P04T1, 20N50, WMQ37N03T1, WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1

Keywords - WMQ35P02TS MOSFET specs

 WMQ35P02TS cross reference

 WMQ35P02TS equivalent finder

 WMQ35P02TS pdf lookup

 WMQ35P02TS substitution

 WMQ35P02TS replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.