All MOSFET. WMQ35P02TS Datasheet

 

WMQ35P02TS Datasheet and Replacement


   Type Designator: WMQ35P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3030-8L
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WMQ35P02TS Datasheet (PDF)

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WMQ35P02TS

WMQ35P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMQ35P02TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGFeatures S V = -20V, I = -35A DS DPDFN3030-8LR

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: AUIRFB4127 | STP3NB80 | IPP80R360P7 | NTP30N06 | ZXM64P02X | FDMS8690 | FDC602P

Keywords - WMQ35P02TS MOSFET datasheet

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