All MOSFET. WMQ37N03T1 Datasheet

 

WMQ37N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ37N03T1
   Marking Code: Q37N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN3030-8L

 WMQ37N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ37N03T1 Datasheet (PDF)

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 wmq37n03t1.pdf

WMQ37N03T1 WMQ37N03T1

WMQ37N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ37N03T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30 V, I = 37A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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