All MOSFET. WMQ37N03T1 Datasheet

 

WMQ37N03T1 Datasheet and Replacement


   Type Designator: WMQ37N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN3030-8L
 

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WMQ37N03T1 Datasheet (PDF)

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WMQ37N03T1

WMQ37N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ37N03T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30 V, I = 37A DS DR

Datasheet: WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , STF13NM60N , WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 .

History: BSC025N03LSG | RUH1H139R | AP2318BEN | BSC019N04NSG | RUH120N35L | SWB020R03VLT | SI3410DV

Keywords - WMQ37N03T1 MOSFET datasheet

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