WMQ37N03T1 PDF and Equivalents Search

 

WMQ37N03T1 Specs and Replacement

Type Designator: WMQ37N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.8 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: PDFN3030-8L

WMQ37N03T1 substitution

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WMQ37N03T1 datasheet

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 wmq37n03t1.pdf pdf_icon

WMQ37N03T1

WMQ37N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ37N03T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30 V, I = 37A DS D R ... See More ⇒

Detailed specifications: WMQ30DP03TS, WMQ30N02T1, WMQ30N03T2, WMQ30N04TS, WMQ30N06TS, WMQ30P03T1, WMQ30P04T1, WMQ35P02TS, IRF520, WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1

Keywords - WMQ37N03T1 MOSFET specs

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