All MOSFET. WMQ50P03T1 Datasheet

 

WMQ50P03T1 Datasheet and Replacement


   Type Designator: WMQ50P03T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PDFN3030-8L
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WMQ50P03T1 Datasheet (PDF)

 ..1. Size:612K  way-on
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WMQ50P03T1

WMQ50P03T1 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ50P03T1 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -30V, I = -50A DS DR

 9.1. Size:599K  way-on
 wmq50n04t1.pdf pdf_icon

WMQ50P03T1

WMQ50N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ50N04T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 40V, I = 50A DS D R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

Keywords - WMQ50P03T1 MOSFET datasheet

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