WMQ55P02T1 MOSFET Datasheet: P-Ch, 20V, 55A. Full specification with pinout and replacement list

WMQ55P02T1 Specs and Replacement

Type Designator: WMQ55P02T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: PDFN3030-8L

WMQ55P02T1 substitution

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WMQ55P02T1 datasheet

..1. Size:624K way-on
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WMQ55P02T1 20V P-Channel Enhancement Mode Power MOSFET Description D D D WMQ55P02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -20V, I = -55A DS D R ... See More ⇒

9.1. Size:597K way-on
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WMQ55N04T1 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ55N04T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 40V, I = 55A DS D R ... See More ⇒

Detailed specifications: WMQ37N03T1, WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, AO3400A, WMQ60P02TS, WMQ80N03T1, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS