WMQ60P02TS PDF and Equivalents Search

 

WMQ60P02TS Specs and Replacement

Type Designator: WMQ60P02TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: PDFN3030-8L

WMQ60P02TS substitution

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WMQ60P02TS datasheet

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WMQ60P02TS

WMQ60P02TS 20V P-Channel Enhancement Mode Power MOSFET Description D D D D WMQ60P02TS uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = -20V, I = -60A DS D R ... See More ⇒

Detailed specifications: WMQ40DN03T1, WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1, IRFB31N20D, WMQ80N03T1, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1

Keywords - WMQ60P02TS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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