All MOSFET. WMQ60P02TS Datasheet

 

WMQ60P02TS Datasheet and Replacement


   Type Designator: WMQ60P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PDFN3030-8L
 

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WMQ60P02TS Datasheet (PDF)

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WMQ60P02TS

WMQ60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ60P02TS uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -20V, I = -60A DS DR

Datasheet: WMQ40DN03T1 , WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , IRF730 , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 .

History: BRCS060N03YB | SI1021R | IGLD60R190D1

Keywords - WMQ60P02TS MOSFET datasheet

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