All MOSFET. WMQ60P02TS Datasheet

 

WMQ60P02TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMQ60P02TS
   Marking Code: Q60P02S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 29.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PDFN3030-8L

 WMQ60P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMQ60P02TS Datasheet (PDF)

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 wmq60p02ts.pdf

WMQ60P02TS WMQ60P02TS

WMQ60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ60P02TS uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = -20V, I = -60A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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