All MOSFET. WMQ80N03T1 Datasheet

 

WMQ80N03T1 Datasheet and Replacement


   Type Designator: WMQ80N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: PDFN3030-8L
 

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WMQ80N03T1 Datasheet (PDF)

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WMQ80N03T1

WMQ80N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ80N03T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 80A DS DR

Datasheet: WMQ40N03T1 , WMQ42P03T1 , WMQ46N03T1 , WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , IRFZ48N , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 .

History: RU4089R | IRF7324PBF-1

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