WMQ80N03T1 PDF and Equivalents Search

 

WMQ80N03T1 Specs and Replacement

Type Designator: WMQ80N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PDFN3030-8L

WMQ80N03T1 substitution

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WMQ80N03T1 datasheet

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 wmq80n03t1.pdf pdf_icon

WMQ80N03T1

WMQ80N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ80N03T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 80A DS D R ... See More ⇒

Detailed specifications: WMQ40N03T1, WMQ42P03T1, WMQ46N03T1, WMQ50N04T1, WMQ50P03T1, WMQ55N04T1, WMQ55P02T1, WMQ60P02TS, STP65NF06, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1, WMR10N03T1

Keywords - WMQ80N03T1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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