All MOSFET. WMR10N03T1 Datasheet

 

WMR10N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMR10N03T1
   Marking Code: 3014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.9 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN2020-6L

 WMR10N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMR10N03T1 Datasheet (PDF)

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 wmr10n03t1.pdf

WMR10N03T1 WMR10N03T1

WMR10N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR10N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 10A DS D DFN2020-6LR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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