All MOSFET. WMR10N03T1 Datasheet

 

WMR10N03T1 Datasheet and Replacement


   Type Designator: WMR10N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN2020-6L
 

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WMR10N03T1 Datasheet (PDF)

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WMR10N03T1

WMR10N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMR10N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 10A DS D DFN2020-6LR

Datasheet: WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , 8N60 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS .

History: BUK761R4-30E | AP9923GEO-HF | CPH5852 | SI4892DY | AP9922GEO-HF | BUK761R3-30E | SI4896DY

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