WMR10N03T1 PDF and Equivalents Search

 

WMR10N03T1 Specs and Replacement

Type Designator: WMR10N03T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN2020-6L

WMR10N03T1 substitution

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WMR10N03T1 datasheet

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 wmr10n03t1.pdf pdf_icon

WMR10N03T1

WMR10N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMR10N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V =30V, I = 10A DS D DFN2020-6L R ... See More ⇒

Detailed specifications: WMQ80N03T1, WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1, IRFB7545, WMR12N03T1, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1, WMR15N03TS, WMS02P15TS

Keywords - WMR10N03T1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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