WMR12N03T1 Specs and Replacement
Type Designator: WMR12N03T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 174 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DFN2020-6L
WMR12N03T1 substitution
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WMR12N03T1 datasheet
wmr12n03t1.pdf
WMR12N03T1 30V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D WMR12N03T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. D D Features DFN2020-6L V =30V, I = 12A DS D R ... See More ⇒
wmr12p02t1.pdf
WMR12P02T1 20V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WMR12P02T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -20V, I = -11.5A DS D R ... See More ⇒
Detailed specifications: WMR050N03LG4, WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1, WMR10N03T1, AON7403, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1, WMR15N03TS, WMS02P15TS, WMS032N04LG2
Keywords - WMR12N03T1 MOSFET specs
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