WMR12N03T1 Datasheet and Replacement
Type Designator: WMR12N03T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 174 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DFN2020-6L
WMR12N03T1 substitution
WMR12N03T1 Datasheet (PDF)
wmr12n03t1.pdf

WMR12N03T1 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR12N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =30V, I = 12A DS DR
wmr12p02t1.pdf

WMR12P02T1 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR12P02T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -11.5A DS DR
Datasheet: WMR050N03LG4 , WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , EMB04N03H , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 .
History: RTR020P02 | NDS8926 | LNH04R035B | RTQ045N03TR | BRCS080N10SHZC | FQU2N50BTU | WMN13N50C4
Keywords - WMR12N03T1 MOSFET datasheet
WMR12N03T1 cross reference
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WMR12N03T1 replacement
History: RTR020P02 | NDS8926 | LNH04R035B | RTQ045N03TR | BRCS080N10SHZC | FQU2N50BTU | WMN13N50C4



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