WMR12P02T1 MOSFET Datasheet: P-Ch, 20V, 11.5A. Full specification with pinout and replacement list

WMR12P02T1 Specs and Replacement

Type Designator: WMR12P02T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.5 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN2020-6L

WMR12P02T1 substitution

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WMR12P02T1 datasheet

..1. Size:667K way-on
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WMR12P02T1 20V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WMR12P02T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -20V, I = -11.5A DS D R ... See More ⇒

9.1. Size:620K way-on
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WMR12N03T1 30V N-Channel Enhancement Mode Power MOSFET G D Pin1 D S Description D S D S D D WMR12N03T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. D D Features DFN2020-6L V =30V, I = 12A DS D R ... See More ⇒

Detailed specifications: WMR05N10TS, WMR05P04TS, WMR07N03T1, WMR07N06TS, WMR07P03TS, WMR09N02T1, WMR10N03T1, WMR12N03T1, K2611, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1, WMR15N03TS, WMS02P15TS, WMS032N04LG2, WMS048NV6HG4