All MOSFET. WMR12P02T1 Datasheet

 

WMR12P02T1 Datasheet and Replacement


   Type Designator: WMR12P02T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.5 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN2020-6L
 

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WMR12P02T1 Datasheet (PDF)

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WMR12P02T1

WMR12P02T1 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR12P02T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -11.5A DS DR

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WMR12P02T1

WMR12N03T1 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR12N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =30V, I = 12A DS DR

Datasheet: WMR05N10TS , WMR05P04TS , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , IRF9640 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 .

History: IPL65R420E6 | IXTP52P10P | NCE2301C | KMA5D8DP20Q

Keywords - WMR12P02T1 MOSFET datasheet

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