All MOSFET. WMR140NV6LG4 Datasheet

 

WMR140NV6LG4 Datasheet and Replacement


   Type Designator: WMR140NV6LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.9 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: DFN2020-6L
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WMR140NV6LG4 Datasheet (PDF)

 ..1. Size:992K  way-on
 wmr140nv6lg4.pdf pdf_icon

WMR140NV6LG4

WMR140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET GDPin1DDescription SDSDSDDDWMR140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appl

 9.1. Size:622K  way-on
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WMR140NV6LG4

WMR14N03TB 30V N-Channel Enhancement Mode Power MOSFET GDescriptionDDSDSDWMR14N03TB uses advanced power trench technology that has SDDDbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V =30V, I = 13.8A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2425 | SL2343 | IPD35N10S3L-26 | SVS11N70DD2TR | 11N40 | STL7N10F7 | 10N60L-TF1-T

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