All MOSFET. WMR15N02T1 Datasheet

 

WMR15N02T1 Datasheet and Replacement


   Type Designator: WMR15N02T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN2020-6L
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WMR15N02T1 Datasheet (PDF)

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WMR15N02T1

WMR15N02T1 20V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR15N02T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =20V, I = 15A DS DR

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WMR15N02T1

WMR15N03TS 30V N-Channel Enhancement Mode Power MOSFET GDDDescriptionSDD D SSDWMR15N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D D GFeatures DFN2020-6L V =30V, I = 14.5A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AONS420A70 | MMBF5457 | 2N3797 | 26N50 | IPD90N06S4-05 | F10N65 | 2SK3516-01L

Keywords - WMR15N02T1 MOSFET datasheet

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