All MOSFET. WMR15N02T1 Datasheet

 

WMR15N02T1 Datasheet and Replacement


   Type Designator: WMR15N02T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN2020-6L
 

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WMR15N02T1 Datasheet (PDF)

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WMR15N02T1

WMR15N02T1 20V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR15N02T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =20V, I = 15A DS DR

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WMR15N02T1

WMR15N03TS 30V N-Channel Enhancement Mode Power MOSFET GDDDescriptionSDD D SSDWMR15N03TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D D GFeatures DFN2020-6L V =30V, I = 14.5A DS DR

Datasheet: WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , HY1906P , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS .

History: STB40NF10LT4 | NCE2301 | SI7374DP | IRFB4410PBF | NCE3050I | APT20M20B2FLL | IRFB7787PBF

Keywords - WMR15N02T1 MOSFET datasheet

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