WMS02P15TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS02P15TS
Marking Code: S02P15S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.6 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOP-8L
WMS02P15TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS02P15TS Datasheet (PDF)
wms02p15ts.pdf
WMS02P15TS 150V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS02P15TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -150V, I = -1.5A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BUZ80A | NDF06N62Z | NDD03N60Z
History: BUZ80A | NDF06N62Z | NDD03N60Z
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918