WMS02P15TS Specs and Replacement
Type Designator: WMS02P15TS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOP8
WMS02P15TS substitution
- MOSFET ⓘ Cross-Reference Search
WMS02P15TS datasheet
wms02p15ts.pdf
WMS02P15TS 150V P-Channel Enhancement Mode Power MOSFET D Description D D WMS02P15TS uses advanced power trench technology that has been D especially tailored to minimize the on-state resistance and yet maintain S superior switching performance. S S G Features SOP-8L V = -150V, I = -1.5A DS D R ... See More ⇒
Detailed specifications: WMR10N03T1, WMR12N03T1, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1, WMR15N03TS, 60N06, WMS032N04LG2, WMS048NV6HG4, WMS048NV6LG4, WMS04N10T1, WMS04N10TS, WMS04P10TS, WMS05P04TS, WMS05P06T1
Keywords - WMS02P15TS MOSFET specs
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WMS02P15TS replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: KMB060N40BA
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