WMS02P15TS Datasheet and Replacement
Type Designator: WMS02P15TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 21 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOP-8L
WMS02P15TS substitution
WMS02P15TS Datasheet (PDF)
wms02p15ts.pdf

WMS02P15TS 150V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS02P15TS uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet maintain Ssuperior switching performance. SSGFeatures SOP-8L V = -150V, I = -1.5A DS DR
Datasheet: WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , AO4468 , WMS032N04LG2 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 .
History: STB5NK50Z-1 | APT12060B2VFR | IRFR210PBF | SIS426DN | RU40130R | SRT10N040HC | KN0606L
Keywords - WMS02P15TS MOSFET datasheet
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History: STB5NK50Z-1 | APT12060B2VFR | IRFR210PBF | SIS426DN | RU40130R | SRT10N040HC | KN0606L



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