WMS032N04LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS032N04LG2
Marking Code: S032N04L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.5 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 1050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: SOP-8L
WMS032N04LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS032N04LG2 Datasheet (PDF)
wms032n04lg2.pdf
WMS032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS032N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
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