WMS032N04LG2 PDF and Equivalents Search

 

WMS032N04LG2 Specs and Replacement

Type Designator: WMS032N04LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SOP8

WMS032N04LG2 substitution

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WMS032N04LG2 datasheet

 ..1. Size:573K  way-on
 wms032n04lg2.pdf pdf_icon

WMS032N04LG2

WMS032N04LG2 40V N-Channel Enhancement Mode Power MOSFET D Description D D D WMS032N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. SOP-8L Features ... See More ⇒

Detailed specifications: WMR12N03T1, WMR12P02T1, WMR13N03T1, WMR140NV6LG4, WMR14N03TB, WMR15N02T1, WMR15N03TS, WMS02P15TS, IRFP064N, WMS048NV6HG4, WMS048NV6LG4, WMS04N10T1, WMS04N10TS, WMS04P10TS, WMS05P04TS, WMS05P06T1, WMS05P10TS

Keywords - WMS032N04LG2 MOSFET specs

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