All MOSFET. WMS032N04LG2 Datasheet

 

WMS032N04LG2 Datasheet and Replacement


   Type Designator: WMS032N04LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: SOP-8L
 

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WMS032N04LG2 Datasheet (PDF)

 ..1. Size:573K  way-on
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WMS032N04LG2

WMS032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS032N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures

Datasheet: WMR12N03T1 , WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , 5N50 , WMS048NV6HG4 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS .

History: SI6466ADQ | SSF5NS70UF | SSF6014

Keywords - WMS032N04LG2 MOSFET datasheet

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