WMS15P02T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMS15P02T1
Marking Code: S15P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 20.2 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: SOP-8L
WMS15P02T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMS15P02T1 Datasheet (PDF)
wms15p02t1.pdf
WMS15P02T1 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS15P02T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Dyet maintain superior switching performance. SFeatures SSG V = -20V, I = -15A DS DSOP-8LR
wms15n03t1.pdf
WMS15N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS15N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 15A DS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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