WMS15P02T1 Specs and Replacement
Type Designator: WMS15P02T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.2 nS
Cossⓘ - Output Capacitance: 520 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: SOP8
WMS15P02T1 substitution
- MOSFET ⓘ Cross-Reference Search
WMS15P02T1 datasheet
wms15p02t1.pdf
WMS15P02T1 20V P-Channel Enhancement Mode Power MOSFET Description D D WMS15P02T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance. S Features S S G V = -20V, I = -15A DS D SOP-8L R ... See More ⇒
wms15n03t1.pdf
WMS15N03T1 30V N-Channel Enhancement Mode Power MOSFET D Description D D WMS15N03T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 30V, I = 15A DS D R ... See More ⇒
Detailed specifications: WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , K3569 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS .
Keywords - WMS15P02T1 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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