WMS240N10LG2 Datasheet and Replacement
Type Designator: WMS240N10LG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP-8L
WMS240N10LG2 substitution
WMS240N10LG2 Datasheet (PDF)
wms240n10lg2.pdf

WMS240N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures
Datasheet: WMS14DN03T1 , WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , IRFB3607 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS .
History: RAL035P01 | IRLML6302TRPBF | MTP12N08L | IPG20N06S4L-11A
Keywords - WMS240N10LG2 MOSFET datasheet
WMS240N10LG2 cross reference
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History: RAL035P01 | IRLML6302TRPBF | MTP12N08L | IPG20N06S4L-11A



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