All MOSFET. WMS240N10LG2 Datasheet

 

WMS240N10LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS240N10LG2
   Marking Code: S240N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 3.1 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 20 nC
   Rise Time (tr): 31 nS
   Drain-Source Capacitance (Cd): 146 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
   Package: SOP-8L

 WMS240N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS240N10LG2 Datasheet (PDF)

 ..1. Size:813K  way-on
wms240n10lg2.pdf

WMS240N10LG2
WMS240N10LG2

WMS240N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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