All MOSFET. WMS240N10LG2 Datasheet


WMS240N10LG2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WMS240N10LG2
   Marking Code: S240N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 3.1 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 20 nC
   Rise Time (tr): 31 nS
   Drain-Source Capacitance (Cd): 146 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
   Package: SOP-8L

 WMS240N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


WMS240N10LG2 Datasheet (PDF)

 ..1. Size:813K  way-on


WMS240N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

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