All MOSFET. WMS240N10LG2 Datasheet

 

WMS240N10LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS240N10LG2
   Marking Code: S240N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP-8L

 WMS240N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS240N10LG2 Datasheet (PDF)

 ..1. Size:813K  way-on
 wms240n10lg2.pdf

WMS240N10LG2 WMS240N10LG2

WMS240N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

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