WMS690N15HG2 PDF Specs and Replacement
Type Designator: WMS690N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.6 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: SOP8
WMS690N15HG2 substitution
WMS690N15HG2 PDF Specs
wms690n15hg2.pdf
WMS690N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D D WMS690N15HG2 uses Wayon's 2nd generation power trench D MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching S S performance. This device is well suited for high efficiency fast S G switching applications. SOP-8L Features ... See More ⇒
Detailed specifications: WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , 13N50 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS .
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