All MOSFET. WMS690N15HG2 Datasheet


WMS690N15HG2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WMS690N15HG2
   Marking Code: S690N15H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 3.1 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 7.5 nC
   Rise Time (tr): 4.6 nS
   Drain-Source Capacitance (Cd): 48 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.069 Ohm
   Package: SOP-8L

 WMS690N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


WMS690N15HG2 Datasheet (PDF)

 ..1. Size:420K  way-on


WMS690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS690N15HG2 uses Wayon's 2nd generation power trench DMOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching S Sperformance. This device is well suited for high efficiency fast SGswitching applications.SOP-8LFeatures

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