WMS690N15HG2 Datasheet. Specs and Replacement

Type Designator: WMS690N15HG2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: SOP8

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WMS690N15HG2 datasheet

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WMS690N15HG2

WMS690N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D D WMS690N15HG2 uses Wayon's 2nd generation power trench D MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching S S performance. This device is well suited for high efficiency fast S G switching applications. SOP-8L Features ... See More ⇒

Detailed specifications: WMS14P03T1, WMS15N03T1, WMS15P02T1, WMS175DN10LG4, WMS175N10HG4, WMS175N10LG4, WMS17P03TS, WMS240N10LG2, 13N50, WMT04N10TS, WMT04P06TS, WMT04P10TS, WMT05N10T1, WMT05N12TS, WMT07N03T1, WMT07N06TS, WMT07N10TS

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