All MOSFET. WMS690N15HG2 Datasheet

 

WMS690N15HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS690N15HG2
   Marking Code: S690N15H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: SOP-8L

 WMS690N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS690N15HG2 Datasheet (PDF)

 ..1. Size:420K  way-on
 wms690n15hg2.pdf

WMS690N15HG2 WMS690N15HG2

WMS690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS690N15HG2 uses Wayon's 2nd generation power trench DMOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching S Sperformance. This device is well suited for high efficiency fast SGswitching applications.SOP-8LFeatures

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1821 | ME7900EN-G | J300 | S85N042R

 

 
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