All MOSFET. WMS690N15HG2 Datasheet

 

WMS690N15HG2 Datasheet and Replacement


   Type Designator: WMS690N15HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: SOP8
 

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WMS690N15HG2 Datasheet (PDF)

 ..1. Size:420K  way-on
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WMS690N15HG2

WMS690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS690N15HG2 uses Wayon's 2nd generation power trench DMOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching S Sperformance. This device is well suited for high efficiency fast SGswitching applications.SOP-8LFeatures

Datasheet: WMS14P03T1 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , TK10A60D , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS .

History: CTM06N60

Keywords - WMS690N15HG2 MOSFET datasheet

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