WMT04P06TS Datasheet. Specs and Replacement

Type Designator: WMT04P06TS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOT223

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WMT04P06TS datasheet

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WMT04P06TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS D R ... See More ⇒

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WMT04P06TS

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WMT04P06TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS D R ... See More ⇒

Detailed specifications: WMS15P02T1, WMS175DN10LG4, WMS175N10HG4, WMS175N10LG4, WMS17P03TS, WMS240N10LG2, WMS690N15HG2, WMT04N10TS, 12N60, WMT04P10TS, WMT05N10T1, WMT05N12TS, WMT07N03T1, WMT07N06TS, WMT07N10TS, WMU080N10HG2, IRF9317TR

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