All MOSFET. WMT04P06TS Datasheet

 

WMT04P06TS Datasheet and Replacement


   Type Designator: WMT04P06TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT223
 

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WMT04P06TS Datasheet (PDF)

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WMT04P06TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR

 8.1. Size:1003K  way-on
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WMT04P06TS

WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR

 9.1. Size:981K  way-on
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WMT04P06TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR

Datasheet: WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , 12N60 , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR .

History: FMC12N60ES

Keywords - WMT04P06TS MOSFET datasheet

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