WMT04P06TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMT04P06TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.7 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 3.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 66 nS
Drain-Source Capacitance (Cd): 59 pF
Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm
Package: SOT223
WMT04P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMT04P06TS Datasheet (PDF)
wmt04p06ts.pdf
WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR
wmt04p10ts.pdf
WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR
wmt04n10ts.pdf
WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
