All MOSFET. WMT05N10T1 Datasheet

 

WMT05N10T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMT05N10T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 4.2 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 13.9 nC
   Rise Time (tr): 28 nS
   Drain-Source Capacitance (Cd): 32 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
   Package: SOT223

 WMT05N10T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMT05N10T1 Datasheet (PDF)

 ..1. Size:508K  way-on
wmt05n10t1.pdf

WMT05N10T1
WMT05N10T1

WMT05N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 5A DS DR

 7.1. Size:632K  way-on
wmt05n12ts.pdf

WMT05N10T1
WMT05N10T1

WMT05N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 120V, I = 4.6A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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