All MOSFET. WMT05N10T1 Datasheet

 

WMT05N10T1 Datasheet and Replacement


   Type Designator: WMT05N10T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
 

 WMT05N10T1 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMT05N10T1 Datasheet (PDF)

 ..1. Size:508K  way-on
 wmt05n10t1.pdf pdf_icon

WMT05N10T1

WMT05N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 5A DS DR

 7.1. Size:632K  way-on
 wmt05n12ts.pdf pdf_icon

WMT05N10T1

WMT05N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 120V, I = 4.6A DS DR

Datasheet: WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , IRF530 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A .

History: NTTFS5116PLTAG | HRLW250N10K | JFPC16N50C | SIRA72DP | IRFR4510TR | TMA8N60H | TMA20N65HG

Keywords - WMT05N10T1 MOSFET datasheet

 WMT05N10T1 cross reference
 WMT05N10T1 equivalent finder
 WMT05N10T1 lookup
 WMT05N10T1 substitution
 WMT05N10T1 replacement

 

 
Back to Top

 


 
.