WMT05N10T1 Datasheet. Specs and Replacement

Type Designator: WMT05N10T1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT223

WMT05N10T1 substitution

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WMT05N10T1 datasheet

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 wmt05n10t1.pdf pdf_icon

WMT05N10T1

WMT05N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMT05N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 5A DS D R ... See More ⇒

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 wmt05n12ts.pdf pdf_icon

WMT05N10T1

WMT05N12TS 120V N-Channel Enhancement Mode Power MOSFET Description WMT05N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 120V, I = 4.6A DS D R ... See More ⇒

Detailed specifications: WMS175N10HG4, WMS175N10LG4, WMS17P03TS, WMS240N10LG2, WMS690N15HG2, WMT04N10TS, WMT04P06TS, WMT04P10TS, IRF1010E, WMT05N12TS, WMT07N03T1, WMT07N06TS, WMT07N10TS, WMU080N10HG2, IRF9317TR, SL002P02K, SL05N06A

Keywords - WMT05N10T1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.