WMT05N12TS MOSFET PDF: N-Ch, 120V, 4.6A. Datasheet. Full specification with pinout and replacement list

WMT05N12TS Specs and Replacement

   Type Designator: WMT05N12TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT223

WMT05N12TS substitution

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WMT05N12TS datasheet

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WMT05N12TS 120V N-Channel Enhancement Mode Power MOSFET Description WMT05N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 120V, I = 4.6A DS D R ... See More ⇒

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WMT05N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMT05N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 5A DS D R ... See More ⇒

Detailed specifications: WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , IRFB3607 , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z .