All MOSFET. WMT05N12TS Datasheet

 

WMT05N12TS Datasheet and Replacement


   Type Designator: WMT05N12TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT223
      - MOSFET Cross-Reference Search

 

WMT05N12TS Datasheet (PDF)

 ..1. Size:632K  way-on
 wmt05n12ts.pdf pdf_icon

WMT05N12TS

WMT05N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 120V, I = 4.6A DS DR

 7.1. Size:508K  way-on
 wmt05n10t1.pdf pdf_icon

WMT05N12TS

WMT05N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT05N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 5A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQPF10N60CF | 1N70Z | AP30H80Q | R6006JND3 | R6018ANJ | R6006KNX | KHB011N40F2

Keywords - WMT05N12TS MOSFET datasheet

 WMT05N12TS cross reference
 WMT05N12TS equivalent finder
 WMT05N12TS lookup
 WMT05N12TS substitution
 WMT05N12TS replacement

 

 
Back to Top

 


 
.