WMT07N10TS MOSFET Datasheet: N-Ch, 100V, 6.8A. Full specification with pinout and replacement list

WMT07N10TS Specs and Replacement

   Type Designator: WMT07N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT223

WMT07N10TS substitution

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WMT07N10TS datasheet

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WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS D R ... See More ⇒

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WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R ... See More ⇒

8.2. Size:469K way-on
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WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET Description WMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS D R ... See More ⇒

Detailed specifications: WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , CS150N03A8 , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R .