All MOSFET. WMT07N10TS Datasheet

 

WMT07N10TS Datasheet and Replacement


   Type Designator: WMT07N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT223
 

 WMT07N10TS substitution

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WMT07N10TS Datasheet (PDF)

 ..1. Size:994K  way-on
 wmt07n10ts.pdf pdf_icon

WMT07N10TS

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR

 8.1. Size:514K  way-on
 wmt07n06ts.pdf pdf_icon

WMT07N10TS

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R

 8.2. Size:469K  way-on
 wmt07n03t1.pdf pdf_icon

WMT07N10TS

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR

Datasheet: WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , IRLB4132 , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R .

History: 10N80

Keywords - WMT07N10TS MOSFET datasheet

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