WMT07N10TS Datasheet and Replacement
Type Designator: WMT07N10TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 56 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: SOT223
WMT07N10TS substitution
WMT07N10TS Datasheet (PDF)
wmt07n10ts.pdf

WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR
wmt07n06ts.pdf

WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R
wmt07n03t1.pdf

WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR
Datasheet: WMS690N15HG2 , WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , IRLB4132 , WMU080N10HG2 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R .
History: BL9N20-P | YJL03G10A | SSF2810EH2 | DH1K1N10I | AP9412AGI | EKI06051 | NCE82H110
Keywords - WMT07N10TS MOSFET datasheet
WMT07N10TS cross reference
WMT07N10TS equivalent finder
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WMT07N10TS substitution
WMT07N10TS replacement
History: BL9N20-P | YJL03G10A | SSF2810EH2 | DH1K1N10I | AP9412AGI | EKI06051 | NCE82H110



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