WMT07N10TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMT07N10TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 6.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.2 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: SOT223
WMT07N10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMT07N10TS Datasheet (PDF)
wmt07n10ts.pdf
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WMT07N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 6.8A DS DR
wmt07n06ts.pdf
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WMT07N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 60V, I = 7A DS D R
wmt07n03t1.pdf
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WMT07N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMT07N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 30V, I = 7A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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