All MOSFET. WMU080N10HG2 Datasheet


WMU080N10HG2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WMU080N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 28.4 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 42 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 25.4 nC
   Rise Time (tr): 4.1 nS
   Drain-Source Capacitance (Cd): 395 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm
   Package: TO220F

 WMU080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


WMU080N10HG2 Datasheet (PDF)

 ..1. Size:984K  way-on


WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Sresistance and yet maintain superior switching performance. This device is GDwell suited for high efficiency fast switching performance. TO-220F NLFeatures V = 100V, I =

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