WMU080N10HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMU080N10HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25.4 nC
trⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 395 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO220F
WMU080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMU080N10HG2 Datasheet (PDF)
wmu080n10hg2.pdf
WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Sresistance and yet maintain superior switching performance. This device is GDwell suited for high efficiency fast switching performance. TO-220F NLFeatures V = 100V, I =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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