All MOSFET. WMU080N10HG2 Datasheet

 

WMU080N10HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMU080N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 28.4 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 42 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 25.4 nC
   Rise Time (tr): 4.1 nS
   Drain-Source Capacitance (Cd): 395 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm
   Package: TO220F

 WMU080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMU080N10HG2 Datasheet (PDF)

 ..1. Size:984K  way-on
wmu080n10hg2.pdf

WMU080N10HG2
WMU080N10HG2

WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Sresistance and yet maintain superior switching performance. This device is GDwell suited for high efficiency fast switching performance. TO-220F NLFeatures V = 100V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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