All MOSFET. WMU080N10HG2 Datasheet

 

WMU080N10HG2 Datasheet and Replacement


   Type Designator: WMU080N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25.4 nC
   tr ⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO220F
 

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WMU080N10HG2 Datasheet (PDF)

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WMU080N10HG2

WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Sresistance and yet maintain superior switching performance. This device is GDwell suited for high efficiency fast switching performance. TO-220F NLFeatures V = 100V, I =

Datasheet: WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , IRFP450 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A .

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