WMU080N10HG2 Specs and Replacement
Type Designator: WMU080N10HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 395 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO220F
WMU080N10HG2 substitution
WMU080N10HG2 datasheet
wmu080n10hg2.pdf
WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S resistance and yet maintain superior switching performance. This device is GD well suited for high efficiency fast switching performance. TO-220F NL Features V = 100V, I =... See More ⇒
Detailed specifications: WMT04N10TS , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , NCEP15T14 , IRF9317TR , SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A .
Keywords - WMU080N10HG2 MOSFET specs
WMU080N10HG2 cross reference
WMU080N10HG2 equivalent finder
WMU080N10HG2 pdf lookup
WMU080N10HG2 substitution
WMU080N10HG2 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
LIST
Last Update
MOSFET: AP90N03GD | AP85P04G | AP85N04Q | AP85N04K | AP85N04G | AP80P04K | AP80N06T | AP80N06H | AP80N06DH | AP7N10K
Popular searches
c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b