WMU080N10HG2 Datasheet. Specs and Replacement

Type Designator: WMU080N10HG2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

Cossⓘ - Output Capacitance: 395 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO220F

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WMU080N10HG2 datasheet

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WMU080N10HG2

WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S resistance and yet maintain superior switching performance. This device is GD well suited for high efficiency fast switching performance. TO-220F NL Features V = 100V, I =... See More ⇒

Detailed specifications: WMT04N10TS, WMT04P06TS, WMT04P10TS, WMT05N10T1, WMT05N12TS, WMT07N03T1, WMT07N06TS, WMT07N10TS, NCEP15T14, IRF9317TR, SL002P02K, SL05N06A, SL05N06Z, SL05N10A, SL1002B, SL100N03R, SL10N06A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.