All MOSFET. WMU080N10HG2 Datasheet

 

WMU080N10HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMU080N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.4 nC
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO220F

 WMU080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMU080N10HG2 Datasheet (PDF)

 ..1. Size:984K  way-on
 wmu080n10hg2.pdf

WMU080N10HG2 WMU080N10HG2

WMU080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMU080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Sresistance and yet maintain superior switching performance. This device is GDwell suited for high efficiency fast switching performance. TO-220F NLFeatures V = 100V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top