SL10P04S MOSFET. Datasheet pdf. Equivalent
Type Designator: SL10P04S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.2 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
SL10P04S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL10P04S Datasheet (PDF)
..1. Size:1921K slkor
sl10p04s.pdf
sl10p04s.pdf
SL10P04SDescriptionThis P-Channel MOSFET uses advanced trench technology andDdesign to provide excellent R with low gate charge.DS(on)DDIt can be used in a wide variety of applications.DS1SSFeaturesG1) V =-40V,I =-10A,R
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