SL10P04S Datasheet and Replacement
Type Designator: SL10P04S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
SL10P04S substitution
SL10P04S Datasheet (PDF)
sl10p04s.pdf
SL10P04SDescriptionThis P-Channel MOSFET uses advanced trench technology andDdesign to provide excellent R with low gate charge.DS(on)DDIt can be used in a wide variety of applications.DS1SSFeaturesG1) V =-40V,I =-10A,R
Datasheet: SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , 2SK3568 , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A .
History: 2SK579S | 2SK1191 | RZL025P01TR
Keywords - SL10P04S MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK579S | 2SK1191 | RZL025P01TR
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