All MOSFET. SL10P04S Datasheet

 

SL10P04S Datasheet and Replacement


   Type Designator: SL10P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8
 

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SL10P04S Datasheet (PDF)

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SL10P04S

SL10P04SDescriptionThis P-Channel MOSFET uses advanced trench technology andDdesign to provide excellent R with low gate charge.DS(on)DDIt can be used in a wide variety of applications.DS1SSFeaturesG1) V =-40V,I =-10A,R

Datasheet: SL002P02K , SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , 5N65 , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A .

History: 3N60F | SI7448DP

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