SL10P04S Datasheet and Replacement
Type Designator: SL10P04S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
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SL10P04S Datasheet (PDF)
sl10p04s.pdf

SL10P04SDescriptionThis P-Channel MOSFET uses advanced trench technology andDdesign to provide excellent R with low gate charge.DS(on)DDIt can be used in a wide variety of applications.DS1SSFeaturesG1) V =-40V,I =-10A,R
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - SL10P04S MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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