SL10P04S Specs and Replacement
Type Designator: SL10P04S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
SL10P04S substitution
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SL10P04S datasheet
sl10p04s.pdf
SL10P04S Description This P-Channel MOSFET uses advanced trench technology and D design to provide excellent R with low gate charge. DS(on) D D It can be used in a wide variety of applications. D S1 S S Features G 1) V =-40V,I =-10A,R ... See More ⇒
Detailed specifications: SL002P02K, SL05N06A, SL05N06Z, SL05N10A, SL1002B, SL100N03R, SL10N06A, SL10N10A, 2SK3568, SL120N03R, SL12N10, SL12N100, SL12N100F, SL12N100K, SL12N100T, SL12P03S, SL15N10A
Keywords - SL10P04S MOSFET specs
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History: STM4800S | SI2323DS
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