All MOSFET. SL10P04S Datasheet

 

SL10P04S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL10P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 SL10P04S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL10P04S Datasheet (PDF)

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 sl10p04s.pdf

SL10P04S SL10P04S

SL10P04SDescriptionThis P-Channel MOSFET uses advanced trench technology andDdesign to provide excellent R with low gate charge.DS(on)DDIt can be used in a wide variety of applications.DS1SSFeaturesG1) V =-40V,I =-10A,R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI9433DY

 

 
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