SL120N03R Datasheet and Replacement
Type Designator: SL120N03R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1710 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: PDFN5X6-8L
SL120N03R substitution
SL120N03R Datasheet (PDF)
sl120n03r.pdf

SL120N03R N-Channel Enhancement Mode Power MOSFETDescription This Power MOSFET is produced using advanced Trench technology. This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power applications. Features PDFN5*6-8L VDS=30VI
Datasheet: SL05N06A , SL05N06Z , SL05N10A , SL1002B , SL100N03R , SL10N06A , SL10N10A , SL10P04S , STP80NF70 , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , SL12P03S , SL15N10A , SL160N03R .
History: DKG1020 | CEM6056 | AOD4158P | SL10N10A | NCEP0112AS | HM2319A | 7N60L-A-TF3
Keywords - SL120N03R MOSFET datasheet
SL120N03R cross reference
SL120N03R equivalent finder
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History: DKG1020 | CEM6056 | AOD4158P | SL10N10A | NCEP0112AS | HM2319A | 7N60L-A-TF3



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