SL12N100T Datasheet and Replacement
Type Designator: SL12N100T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 116 nS
Cossⓘ - Output Capacitance: 189 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO247
SL12N100T substitution
SL12N100T Datasheet (PDF)
sl12n100t sl12n100k sl12n100 sl12n100f.pdf

SL12N100Features Low gate charge Low C (typ 13pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast based on half bridge LED power suppliesAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS12 AI T
sl12n10.pdf

SL12N10 100V/12A N-Channel MOSFETFeatures Super high density cell design Product Summaryfor extremely low RDS(ON) VDS RDS(ON) MAX ID MAX Exceptional on-resistance and maximum DC current capability 160m@10VD2S1100V 12AD1180m@4.5VApplication Power Management in Note book DC/DC Converter D Load Switch LCD Display inverter DDGS
Datasheet: SL10N06A , SL10N10A , SL10P04S , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , 75N75 , SL12P03S , SL15N10A , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 .
History: IPP60R160P7 | MCAC60N08Y-TP | AP10TN030M | SKST065N08N | LNG045R090 | DMG8822UTS | FDMC86320
Keywords - SL12N100T MOSFET datasheet
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History: IPP60R160P7 | MCAC60N08Y-TP | AP10TN030M | SKST065N08N | LNG045R090 | DMG8822UTS | FDMC86320



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