All MOSFET. SL12P03S Datasheet

 

SL12P03S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL12P03S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 233 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8

 SL12P03S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL12P03S Datasheet (PDF)

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 sl12p03s.pdf

SL12P03S SL12P03S

SL12P03S 100% EAS GuaranteedProduct Summary Green Device Available Super Low Gate ChargeBVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench -30V 9.5 m -12 AtechnologySOP8 Pin ConfigurationGeneral DescriptionThe SL12P03S is the high cell density trenched P-ch MOSFETs, which provide excellent RDSONand gate charge for mos

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