SL12P03S PDF and Equivalents Search

 

SL12P03S Specs and Replacement

Type Designator: SL12P03S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 233 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP8

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SL12P03S datasheet

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sl12p03s.pdf pdf_icon

SL12P03S

SL12P03S 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench -30V 9.5 m -12 A technology SOP8 Pin Configuration General Description The SL12P03S is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and gate charge for mos... See More ⇒

Detailed specifications: SL10N10A, SL10P04S, SL120N03R, SL12N10, SL12N100, SL12N100F, SL12N100K, SL12N100T, 20N50, SL15N10A, SL160N03R, SL18N20, SL18N50F, SL2016, SL2026, SL20N03, SL20N10

Keywords - SL12P03S MOSFET specs

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