All MOSFET. SL12P03S Datasheet

 

SL12P03S Datasheet and Replacement


   Type Designator: SL12P03S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 233 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

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SL12P03S Datasheet (PDF)

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SL12P03S

SL12P03S 100% EAS GuaranteedProduct Summary Green Device Available Super Low Gate ChargeBVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench -30V 9.5 m -12 AtechnologySOP8 Pin ConfigurationGeneral DescriptionThe SL12P03S is the high cell density trenched P-ch MOSFETs, which provide excellent RDSONand gate charge for mos

Datasheet: SL10N10A , SL10P04S , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , 2N60 , SL15N10A , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , SL20N10 .

History: G15N10C | K596

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