SL12P03S Datasheet and Replacement
Type Designator: SL12P03S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 233 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
SL12P03S substitution
SL12P03S Datasheet (PDF)
sl12p03s.pdf

SL12P03S 100% EAS GuaranteedProduct Summary Green Device Available Super Low Gate ChargeBVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench -30V 9.5 m -12 AtechnologySOP8 Pin ConfigurationGeneral DescriptionThe SL12P03S is the high cell density trenched P-ch MOSFETs, which provide excellent RDSONand gate charge for mos
Datasheet: SL10N10A , SL10P04S , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , IRF530 , SL15N10A , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , SL20N10 .
History: BTS247Z | WMM22N50C4 | IRFR7440 | AP4509AGH-HF | JMSH1008AE | SSF60R140SFD | 2SK682
Keywords - SL12P03S MOSFET datasheet
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History: BTS247Z | WMM22N50C4 | IRFR7440 | AP4509AGH-HF | JMSH1008AE | SSF60R140SFD | 2SK682



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