All MOSFET. SL12P03S Datasheet

 

SL12P03S Datasheet and Replacement


   Type Designator: SL12P03S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 233 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
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SL12P03S Datasheet (PDF)

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SL12P03S

SL12P03S 100% EAS GuaranteedProduct Summary Green Device Available Super Low Gate ChargeBVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench -30V 9.5 m -12 AtechnologySOP8 Pin ConfigurationGeneral DescriptionThe SL12P03S is the high cell density trenched P-ch MOSFETs, which provide excellent RDSONand gate charge for mos

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N5522 | IRLU9343PBF | 2SK3437 | IRF9310 | R6002END3 | VST012N06MS | 15NM70L-TF34-T

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