All MOSFET. SL15N10A Datasheet

 

SL15N10A Datasheet and Replacement


   Type Designator: SL15N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO252
 

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SL15N10A Datasheet (PDF)

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SL15N10A

SL15N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100V DSI 15A DR ( at V = 10V) 115mohm DS(ON) GSR ( at V = 4.5V) 1 0mohm DS(ON) GS 100% UIS Tested 100% VDS TestedGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Ap

Datasheet: SL10P04S , SL120N03R , SL12N10 , SL12N100 , SL12N100F , SL12N100K , SL12N100T , SL12P03S , CS150N03A8 , SL160N03R , SL18N20 , SL18N50F , SL2016 , SL2026 , SL20N03 , SL20N10 , SL2102 .

History: IPP80P03P4-05 | IRC640PBF | KX12N65F | TK6Q65W | SWI4N60K | MS8N60 | 2N3460

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