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SL15N10A Specs and Replacement

Type Designator: SL15N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TO252

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SL15N10A datasheet

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 sl15n10a.pdf pdf_icon

SL15N10A

SL15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V = 10V) 115mohm DS(ON) GS R ( at V = 4.5V) 1 0mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Ap... See More ⇒

Detailed specifications: SL10P04S, SL120N03R, SL12N10, SL12N100, SL12N100F, SL12N100K, SL12N100T, SL12P03S, IRF520, SL160N03R, SL18N20, SL18N50F, SL2016, SL2026, SL20N03, SL20N10, SL2102

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